Method to obtain a low resistivity and conformity chemical vapor

Details Method to obtain a low resistivity and conformity chemical vapor Method to obtain a low resistivity and conformity chemical vapor

1997-07-09

1999-04-20

Dutton, Brian

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438643, 438653, H01L 214763, H01L 2144

Patent

active

058952675

ABSTRACT:
A method of forming titanium nitride barrier layers that are highly conformal, have high step coverage and low resistivity through a two stage deposition process is described. Low temperature deposition of titanium nitride barrier layer provides material of high conformity and good step coverage but of high resistivity. High temperature deposition of titanium nitride barrier layer yields material of low resistivity. Thus, a titanium nitride barrier layer deposited in separate steps at low temperature and high temperature by the method of the present invention is particularly suited for use in modern devices of increasing density that are characterized by narrow and deep contact holes.

REFERENCES:
patent: 5427666 (1995-06-01), Mueller et al.
patent: 5654235 (1997-08-01), Matsumoto et al.
patent: 5776830 (1998-07-01), Sumi et al.
patent: 5780356 (1998-07-01), Kim

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