Process for making integrated circuit structure comprising local

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation

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438677, 438641, 438674, 438682, 438683, H01L 21441

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active

058952616

ABSTRACT:
A local area interconnect structure comprising one or more electrically conductive interconnects formed from electrically conductive metal compounds is described and a process for forming same. Electrically conductive metal compounds are selectively deposited in one or more trenches which were previously formed in an insulation layer in a configuration conforming to the desired pattern of the electrically conductive interconnects. A seed layer is first selectively formed on surfaces of the trenches and the electrically conductive metal compound is then selectively deposited over the seed layer in the trench, but not on the exposed surfaces of the insulation layer.

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