Semiconductor device having a high breakdown voltage isolation r

Details Semiconductor device having a high breakdown voltage isolation r Semiconductor device having a high breakdown voltage isolation r

1996-10-29

1999-04-13

Whitehead, Jr., Carl W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257492, 257493, 257389, 257900, H01L 27092

Patent

active

058941568

ABSTRACT:
A resurf structure is provided which includes an n type diffusion region surrounded by a n- diffusion region, in which a part of the joined combination of the n type diffusion region and the n- diffusion region is separated by a narrow p- substrate region in between. An aluminum lead is provided between the separated n- diffusion regions, and a signal is level shifted. A high voltage semiconductor device which includes a small area high voltage isolation region is obtained without process cost increase.

REFERENCES:
patent: 4292642 (1981-09-01), Appels et al.
patent: 4835596 (1989-05-01), Werner
patent: 4868921 (1989-09-01), Adler
patent: 5406110 (1995-04-01), Kwon et al.
patent: 5585660 (1996-12-01), Mei

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