Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-10-09
1999-04-13
Meier, Stephen
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257369, H01L 2976, H01L 2994, H01L 31062, H01L 3113
Patent
active
058941550
ABSTRACT:
A semiconductor is made on a silicon substrate containing an impurity of a predetermined polarity having formed therein a well containing an impurity of an opposite polarity to a region in the silicon is provided. The method comprises forming a first masking layer on the surface of the substrate, providing openings in the masking layer and implanting dopant ions of a first polarity into the surface of the substrate in a set of first implant regions in the well on either side of a first central region in the well and in a set of second implant regions adjacent to the well on either side of a second central region adjacent to the well, formation of insulating structures over the first and second regions, forming gate oxide layers above the first and second central regions, forming a second masking layer on the surface of the substrate, providing openings in the masking layer and implanting dopant ions of a second polarity into the surface of the substrate in a set of second implant regions in the well on either side of a first central region in the well and in a set of fourth implant regions adjacent to the well on either side of a second central region adjacent to the well, and formation of conductive gate structures over the gate oxide layers.
REFERENCES:
patent: 4474624 (1984-10-01), Matthews
patent: 5102816 (1992-04-01), Manukonda et al.
Muller et al, Device Electronics for IC'S, pp. 463 and 381, 1986.
"A Novel CMOS-Compatible High-Voltage Transistor Structure" IEEE Trans Electron Devices, vol. ED-33 pp. 1948-1952 (Dec. 1986).
R. Jayaraman et al, "Comparison of High Voltage Devices for POwer Integrated Circuits", pp. 258-261 IEDM'84.
Meier Stephen
United Microelectronics Corporation
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