Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1991-12-12
1993-08-17
Breneman, R. Bruce
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
1566207, 15662073, 156DIG64, 156DIG73, 156DIG111, 437 83, C30B 1300
Patent
active
052365468
ABSTRACT:
A process for producing a crystal article comprises the steps of: forming on a substrate surface a layer (S) comprising a different material (S) providing a nucleation density of the crystal nucleus to be formed sufficiently smaller than the amorphous material (L) constituting the substrate surface, forming an opening on said layer (S) so that the exposed portion of said substrate surface may have an area sufficiently small to the extent that a single crystal may grow only from the single crystal nucleus formed, permitting a single crystal to grow on the exposed portion of the substrate surface at said opening with the single crystal nucleus as the center, and flattening the surface of the grown single crystal by removing a part thereof.
REFERENCES:
patent: 3620833 (1971-11-01), Gleim et al.
patent: 3634150 (1972-01-01), Horn
patent: 4069094 (1978-01-01), Shaw et al.
patent: 4141765 (1979-02-01), Druminski et al.
patent: 4279688 (1981-07-01), Abrahams et al.
patent: 4578142 (1986-03-01), Corboy, Jr. et al.
patent: 5010033 (1991-04-01), Tokunaga et al.
Filby et al. "Single-Crystal Films of Silicon on Insulators" Brit. J. Appl. Phys. vol. 18, 1967 pp. 1357-1382.
"Epitaxial Growth" Part A, by J. W. Matthews, pp. 12, 21, 413 and 428 (1975).
Ogawa et al., "The Selective Epitaxial Growth of Silicon by Using Silicon Nitride Film as a Mask", Jap. J. Appl. Phys. vol. 10, No. 12 (1971), pp. 1675-1679.
Claassen et al., "The Nucleation of CVD Silicon on SiO.sub.2 and Si.sub.3 N.sub.4 Substrates", J. Electrochem. Soc., vol. 127, No. 1 (1980), pp. 194-202.
Jastrzebski, "SOI by CVD: Epitaxial Lateral Overgrowth (ELO) Process-Review", J. Crys. Growth 63 (1983) pp. 493-526.
Breneman R. Bruce
Canon Kabushiki Kaisha
LandOfFree
Process for producing crystal article does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process for producing crystal article, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for producing crystal article will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2241276