Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1992-10-05
1993-08-17
Kunemund, Robert
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156614, 156DIG68, 156DIG89, 156DIG115, 423446, C30B 2506
Patent
active
052365450
ABSTRACT:
A method for preparing heteroepitaxial diamond films on silicon substrates is described. This method first involves the deposition of a cubic boron nitride layer on the silicon substrate as a first interfacial layer using laser ablation with a hexagonal boron nitride target in the presence of a nitrogen-containing atmosphere. The boron nitride layer is followed with a second interfacial layer, generally about 1 to 10 monolayers thick, of hydrogen terminated carbon which is deposited with laser ablation with a carbon target in the presence of atomic hydrogen. Finally, the heteroepitaxial diamond film is deposited using conventional chemical vapor deposition (CVD) techniques with a reactive gas mixture containing hydrogen, a carbon-containing gas or gases, and, optionally, oxygen. Large area, high quality heteroepitaxial diamond films can be prepared by this method. Silicon with such a heteroepitaxial diamond film should be especially suited for the fabrication of high-speed, high-power semiconductor devices at reasonable cost.
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Garrett Felisa
Gossett Dykema
Kunemund Robert
The Board of Governors of Wayne State University
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