Method of growing group III-V compound semiconductor epitaxial l

Details Method of growing group III-V compound semiconductor epitaxial l Method of growing group III-V compound semiconductor epitaxial l

1988-03-24

1989-08-29

Doll, John

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156611, 156613, 156614, 156DIG61, 156DIG81, 156DIG94, 156DIG103, C30B 2514

Patent

active

048614173

ABSTRACT:
A method of growing a group III-V compound semiconductor epitaxial layer on a substrate by use of atomic layer epitaxy grows an aluminum layer on one of {100}, (111)B, ( 111)B, (111)B, and (111)B planes of the substrate by supplying a quantity of aluminum amounting to at least two times a surface density in a group III-V compound semiconductor epitaxial layer or grows an aluminum layer on one of {110} planes of the substrate by supplying a quantity of aluminum amounting to at least three times the surface density in the group III-V compound semiconductor epitaxial layer, and grows a layer of a group V material on the aluminum layer by supplying a quantity of the group V material amounting to at least two or three times a surface density in the group III-V compound semiconductor epitaxial layer. The layer of the group V material and the aluminum layer constituting the group III-V compound semiconductor epitaxial layer.

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Chang et al., "Smooth and Coherent Layers of GaAs and AlAs Grown by M.B.E.", Applied Physics Letters, vol. 28, No. 1, Jan. 1976, pp. 39 to 41.
Bedair et al., "Atomic Layer Epitaxy of III-V Binary Compounds", Applied Physics Letters, vol. 47, (1), Jul. 1, 1985, pp. 51 to 53.
"Kinetic Processes in Atomic-Layer Epitaxy of GaAs and AlAs Using Pulsed Vapor-Phased Method", M. Ozeki et al; J. Vac. Sci. Techn. B 5(4), Jul./Aug. 1987, pp. 1184-1186.

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