Electrically alterable read only memory semiconductor device mad

Details Electrically alterable read only memory semiconductor device mad Electrically alterable read only memory semiconductor device mad

1982-05-25

1984-06-26

Hecker, Stuart N.

Static information storage and retrieval

Systems using particular element

Semiconductive

357 235, G11C 1140

Patent

active

044569785

ABSTRACT:
An electrically alterable read only memory (EAROM) having a tunneling layer of an insulating material such as silicon dioxide which is grown on the substrate by thermal oxidation carried out at low pressure and a layer of silicon nitride laid down on the tunneling layer by a low-pressure chemical vapor deposition, the interface of the two layers forming a charge storage area with the EAROM having improved read/write switching capability and quality, and improved reliability and memory retentivity characteristics.

REFERENCES:
patent: 3485666 (1969-12-01), Sterling et al.
patent: 3520722 (1970-07-01), Scott
patent: 3540926 (1970-11-01), Rairden
patent: 3845327 (1974-10-01), Cricchi
patent: 3895360 (1975-07-01), Cricchi et al.
patent: 4011576 (1977-03-01), Uchida
patent: 4140548 (1979-02-01), Zimmer
patent: 4198252 (1980-04-01), Hsu
patent: 4353083 (1982-10-01), Trudel et al.
Delong, "Advances in Dichlorosilane Epitaxial Technology", Solid State Technology, 10/72, pp. 29-41.
Rosler, "Low Pressure CVD Production Prosses for Poly, Nitride and Oxide", Solid State Technology, 4/77, pp. 63-70.
Penner, "Digital Television Tuner uses MOS LSI and Nonvolatile Memory", Electronics, vol. 49, No. 7, pp. 86-90, 4/76.
Hsia, "MNOS LSI Memory Device Data Retention Measurements and Projections", IEEE Trans. on Elec. Dev., vol. Ed-24, No. 5, pp. 568-577, 5/77.

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