Static information storage and retrieval – Read/write circuit
Patent
1990-04-30
1992-06-02
Fears, Terrell W.
Static information storage and retrieval
Read/write circuit
36518905, 365186, 365205, G11C 1140
Patent
active
051193329
ABSTRACT:
A dynamic RAM integrated circuit of the one-element memory cell type is provided with a plurality of data lines, a sense amplifier, a plurality of word lines disposed in a manner to intersect with the data lines, and memory cells disposed at the points of intersection between the data lines and the word lines. The RAM includes a P-type semiconductor substrate and an N-type well region formed in the substrate. The memory cells are disposed within the well, and the sense amplifier, which is connected to the date lines, is constructed to a pair of N-channel MOSFETs formed in the semiconductor substrate and a pair of P-channel MOSFETs formed in the well region.
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Kawamoto Hiroshi
Masuda Hiroo
Shimohigashi Katsuhiro
Fears Terrell W.
Hitachi , Ltd.
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