Ferroelectric memory cell and reading/writing method thereof

Details Ferroelectric memory cell and reading/writing method thereof Ferroelectric memory cell and reading/writing method thereof

1995-12-26

1997-09-16

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365149, G11C 1122

Patent

active

056687540

ABSTRACT:
A ferroelectric memory cell is provided, which enables to store a plurality of data values therein, and writing and reading methods thereof. The memory cell is includes first to n-th ferroelectric capacitors connected in parallel where n is an integer greater than unity. The first to n-th capacitors have different reverse voltages from each other, where each of the reverse voltages is defined as an applied voltage at which a direction of polarization is reversed. Each of the first to n-th capacitors stores a two-valued information. Each of the first to n-th capacitors stores a two-valued information and therefore, the memory cell can store 2.sup.n data values therein. The integration scale can be enhanced.

REFERENCES:
patent: 5495438 (1996-02-01), Omura

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