Process for the chemical etch polishing of semiconductors

Details Process for the chemical etch polishing of semiconductors Process for the chemical etch polishing of semiconductors

1979-04-30

1981-01-13

Massie, Jerome W.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156345, 156662, H01L 21306

Patent

active

042447755

ABSTRACT:
A method for thinning and polishing semiconductor materials such as gallium arsenide is disclosed. This method utilizes a chemical etchant in conjunction with a grooved flat polishing plate. The polishing plate has a hardness greater than 2 on the mohs scale. High quality polished surfaces are obtained. Exemplary of polishing plate materials is quartz.

REFERENCES:
patent: 2719390 (1955-10-01), Jones
patent: 3342652 (1967-09-01), Reisman et al.
patent: 3549439 (1970-12-01), Kaueggia et al.
patent: 3888053 (1975-06-01), White et al.
Ryll, "Lapping Plate . . . Grooves" Western Electric Technical Digest No. 50 (4/78) pp. 25-26.
Handbook of Chemistry and Physics, 48th Ed. R. Weast editor, The Chemical Rubber Co. Cleveland Ohio p. F-17.
Kirk- Othmer Encyclopedia of Chemical Technology, 2nd Edition, vol. 4, p. 200.

Affiliated with

Also associated with

Rating

Process for the chemical etch polishing of semiconductors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for the chemical etch polishing of semiconductors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for the chemical etch polishing of semiconductors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2229840