Semiconductor device and method for producing semiconductor devi

Details Semiconductor device and method for producing semiconductor devi Semiconductor device and method for producing semiconductor devi

1992-07-07

1994-06-21

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257401, 257412, 257751, 257754, 257774, 437149, 437153, 437191, 437196, 437233, 437913, H01L 2904, H01L 21469

Patent

active

053230469

ABSTRACT:
Semiconductor devices and methods for producing semiconductor devices to be produced by conducting a combination of a step for producing a gate elctrode of a first conductor layer which is piled on a gate insulator, a step for producing a drain region which is connected with an n.sup.+ -region located under the gate electrode by employing the gate electrode as a part of the mask, and a step for piling, on or over the gate electrode, a second conductor layer connected with the n.sup.+ -region through a contact hole produced in the gate electrode.

REFERENCES:
patent: 4291322 (1981-09-01), Clemens
patent: 5191397 (1993-03-01), Yoshida
patent: 5206532 (1993-04-01), Roberts

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