Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-03-27
1994-06-21
Limanek, Robert
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257383, 257904, H01L 2350
Patent
active
053230450
ABSTRACT:
A semiconductor device applicable to/an SRAM and the like provided with a flip-flop having a pair of transistors and a pair of high resistance loads and a Vcc line connected to the pair of high resistance loads of the flip-flop and holding a power supply voltage is described. The high resistance loads and the Vcc line have a common semiconductor layer which has an concentration of impurities at a portion forming the Vcc line higher than an concentration of impurities of a portion forming the high resistance loads. Furthermore, by forming a conductive layer such as tungsten on the portion of the semiconductor layer where the impurity concentration is high, the Vcc line is formed by the conductive layer or a cooperation of the conductive layer and the semiconductor layer disposed under the conductive layer. By means of such a structure, the Vcc line is surely made low in resistance, and the data access speed is made faster.
REFERENCES:
patent: 4581815 (1986-04-01), Cheung et al.
patent: 4592128 (1986-06-01), Bourassa
patent: 4961103 (1990-10-01), Saitoh et al.
Limanek Robert
Nippon Steel Corporation
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