Silicon carbide field effect device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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257 77, 257331, 257334, 257344, H01L 2910, H01L 2978, H01L 29161

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active

053230400

ABSTRACT:
A silicon carbide field effect device includes vertically stacked silicon carbide regions of first conductivity type, extending from a lowermost drain region to an uppermost source region. In between the drain and source regions, a drift region and a channel region are provided. The drift region extends adjacent the drain region and the channel region extends between the drift region and the source region. Control of majority carrier conduction between the source and drain regions is provided by a plurality of trenches, which extend through the source and channel region, and conductive gate electrodes therein. To provide high blocking voltage capability and low on-state resistance, the doping concentration in the drift region is selected to be greater than the doping concentration of the channel region but below the doping concentration of the drain and source regions. Preferably, the material used for the gate electrodes, the spacing between adjacent trenches and the doping concentration of the channel region are chosen so that the channel region is depleted of majority charge carriers when zero potential bias is applied to the gate electrodes.

REFERENCES:
patent: 4903189 (1990-02-01), Ngo et al.
patent: 5202750 (1993-04-01), Gough
Y. Baba, et al., A Study on a High Blocking Voltage UMOS-FET with a Double Gate Structure, Proceedings of 1992 International Symposium on Power Semiconductor Devices & ICs, pp. 300-302.
M. Bhatnagar and B. J. Baliga, Analysis of Silicon Carbide Power Device Performance, IEEE, 1991, pp. 176-180.
T. Syau, et al., Extended Trench-Gate Power UMOSFET Structure with Ultralow Specific On-Resistance, Electronics Letters, vol. 28, No. 9, Apr., 1992 pp. 865-867.
Hiroo Fuma, et al., High Temperature Operated Enhancement-Type .beta.-SiC MOSFET, Japanese Journal of Applied Physics, vol. 27, No. 11, Nov., 1988, pp. L2143-L2145.

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