Semiconductor memory device capable of reducing a leak current f

Details Semiconductor memory device capable of reducing a leak current f Semiconductor memory device capable of reducing a leak current f

1999-01-11

2000-09-05

Elms, Richard

Static information storage and retrieval

Read/write circuit

Including reference or bias voltage generator

36518518, 36518527, G11C 1604

Patent

active

06115296&

ABSTRACT:
In a semiconductor memory device composed of a set of SRAM cells connected in common to one another through a word line and a common connection line, a substrate potential generation circuit is connected to the word line to supply the SRAM cells through the common connection line with a substrate potential determined by a selected or a non-selected state of the word line. The substrate potential is equal to a ground potential in the selected state or is put into a negative potential in the non-selected state. The substrate potential is given to each of drive transistors included in each SRAM to reduce a leak current.

REFERENCES:
patent: 5815032 (1998-09-01), Ariki et al.
patent: 5966043 (1999-10-01), Jinbo
patent: 5986924 (1999-11-01), Yamada

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