Nonvolatile semiconductor memory

Details Nonvolatile semiconductor memory Nonvolatile semiconductor memory

1985-10-15

1987-03-31

Munson, Gene M.

Static information storage and retrieval

Systems using particular element

Semiconductive

357 235, 357 2311, 357 41, 357 54, 357 59, G11C 1140, H01L 2978, H01L 2702, H01L 2934

Patent

active

046548289

ABSTRACT:
A semiconductor nonvolatile memory wherein a unit cell is constructed of a series connection consisting of an MNOS (metal-silicon nitride-silicon dioxide-semiconductor) transistor whose gate electrode is made of polycrystalline silicon and an MOS (metal-silicon dioxide-semiconductor) transistor whose gate electrode is also made of polycrystalline silicon, such unit cells being arrayed in the form of a matrix, and wherein the gate electrode of the MOS transistor is used as a reading word line, the gate electrode of the MNOS transistor is used as a writing word line, and a terminal of either of the MNOS transistor and the MOS transistor connected in series and constituting the unit cell is used as a data line.

REFERENCES:
patent: 3836992 (1974-09-01), Abbas et al.
patent: 3906296 (1975-09-01), Maserjian et al.
patent: 4030081 (1977-06-01), Horninger
patent: 4055837 (1977-10-01), Stein et al.
patent: 4090259 (1978-05-01), Wilcock et al.
patent: 4175291 (1979-11-01), Spence
patent: 4342099 (1982-07-01), Kuo
patent: 4385308 (1983-05-01), Uchida
patent: 4460980 (1984-07-01), Hagiwara et al.
Das Gupta et al., "Dual-Gate Famos Memory Cell" IBM Technical Disclosure Bulletin vol. 17 (1/75) p. 2266.
Hagiwara et al., "A 16 Kb Electrically Erasable Programmable ROM" IEEE Int. Solid-State Circuits Conf. (2/79), Dig. Tech. Papers, pp. 50-51, 277.
Uchiumi et al., "A High Speed 16 K Bit Electrically Erasable Prom" Midcon Professional Program (11/79), Session 21, 6 pages.

Affiliated with

Also associated with

Rating

Nonvolatile semiconductor memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile semiconductor memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2217778