Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-06-26
2000-06-06
Hardy, David
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257384, 257377, 257412, 257413, 257408, 257344, A01L 2976, H01L 2994, H01L 31062, H01L 31113, H01L 31119
Patent
active
060722215
ABSTRACT:
In the method of manufacturing a semiconductor device, according to the present invention, first, a dummy gate electrode consisting of a semiconductor layer and a non-metal cap layer formed on the semiconductor layer, is formed above a substrate. Then, diffusion layers are formed respectively on both sides of the dummy gate electrode. The dummy gate is used as a mask here, and thus the diffusion layers are self-aligned respectively with both sides of the dummy gate electrode. The formation of these diffusion layers requires a high-temperature heat treatment, however since the cap layer is made of a non-metal material, it is not melted down even in the high-temperature heat treatment. Next, the cap layer formed on the semiconductor layer is removed, and a gate groove made by the removal is filled with metal. Thus, a metal gate electrode made of a semiconductor layer and a metal layer is completed. As described above, in the present invention, first, a dummy gate electrode is formed of a non-metal cap layer, and the cap layer is removed after the formation of the diffusion layers, followed by filling the created gate groove with a metal. In this manner, the self-alignment of the diffusion layers and the metallization of the gate electrode can be achieved at the same time.
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Fenty Jesse A.
Hardy David
Kabushiki Kaisha Toshiba
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