Method of forming insulating film

Details Method of forming insulating film Method of forming insulating film

1997-04-16

2000-06-06

Nelms, David

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438778, H01L 2131

Patent

active

060718307

ABSTRACT:
An object of the Invention is to provide a method of forming an insulating film capable of stably causing the insulating film (an organic insulating film) made of an organic material to stably adhere to the surface of a silicon oxide film for a long time without generation of any void The surface of the silicon oxide film is hydroxylated prior to forming the organic insulating film on the silicon oxide film, and the surface of the silicon oxide film is coated with a silane coupling agent. In a case where fluororesin is employed to form the organic insulating film, a compound containing a fluorine atom is preferably employed as the silane coupling agent.

REFERENCES:
patent: 5322888 (1994-06-01), Kato et al.
patent: 5622896 (1997-04-01), Knotter et al.
patent: 5693172 (1997-12-01), Zeldin et al.

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