Method for preventing poisoned vias and trenches

Details Method for preventing poisoned vias and trenches Method for preventing poisoned vias and trenches

1998-09-14

2000-06-06

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438624, 438637, 438671, H01L 214763

Patent

active

060718064

ABSTRACT:
A method for preventing the occurrence of poisoned trenches and vias in a dual damascene process that includes performing a densification process, such as an electron-beam process, on the surface of the exposed dielectric layer around the openings before the openings are filled with conductive material. The densified surface of the dielectric layer is able to efficiently prevent the occurrence of poisoned trenches and vias caused by the outgassing phenomena.

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