Method for forming amorphous carbon thin film by plasma chemical

Details Method for forming amorphous carbon thin film by plasma chemical Method for forming amorphous carbon thin film by plasma chemical

1996-09-24

2000-06-06

Bowers, Charles

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Polycrystalline semiconductor

438758, 438778, 438905, 438931, 427577, 134 11, H05H 100

Patent

active

060717971

ABSTRACT:
In a method of forming an amorphous carbon thin film with a plasma chemical vapor deposition method, at least one of a hydrocarbon gas and a carbon fluoride gas is supplied in a reaction chamber as a material gas. By applying a high voltage between two electrodes, a plasma is generated in the reaction chamber using the supplied material gas. As a result, an amorphous carbon thin film is deposited on a substrate while preventing deposition of an adhesion on an inner wall of the reaction chamber. In order to prevent the adhesion from depositing on the inner wall, a bias voltage such as one of DC bias, a high frequency bias and a high frequency bias imposed on a DC bias is applied to the electrically conductive reaction chamber.

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