Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of...
Patent
1996-10-15
2000-09-05
Beck, Shrive
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
438782, 427240, 427241, 427343, 427347, 427353, 4271261, H01L 2102, B05D 310, B05D 312
Patent
active
061142549
ABSTRACT:
A method for removing contaminants from a semiconductor wafer having a spin on coating of material. Contaminants are removed by applying a cleaning solution to the periphery, and preferably, the exposed backside of the wafer after the edge bead has been dissolved and removed. The cleaning solution is formulated to react chemically with unwanted coating material residue to form a compound that may be ejected from the periphery of the spinning wafer. Any residual solution or precipitate that is not ejected from the wafer may be rinsed away with water, preferably deionized water. One exemplary use of this method is the removal of metallic contaminants that may be left on the periphery and backside of a wafer after the formation of ferroelectric film coatings. A cleaning solution comprising a mixture of hydrochloric acid HCl and water H.sub.2 O or ammonium hydroxide NH.sub.4 OH and water H.sub.2 O is applied to the periphery of the spinning wafer. The cleaning solution will react with any residual metal ions to form a metal chloride or metal hydroxide that is ejected from the wafer along with the cleaning solution.
REFERENCES:
patent: 4113492 (1978-09-01), Sato et al.
patent: 4510176 (1985-04-01), Cuthbert et al.
patent: 4518678 (1985-05-01), Allen
patent: 4685975 (1987-08-01), Kottman et al.
patent: 4732785 (1988-03-01), Brewer
patent: 4804438 (1989-02-01), Rhodes
patent: 4886728 (1989-12-01), Salamy et al.
patent: 5171393 (1992-12-01), Moffat
patent: 5223443 (1993-06-01), Chinn et al.
patent: 5289057 (1994-02-01), Kinugasa
patent: 5362608 (1994-11-01), Flaim et al.
patent: 5423285 (1995-06-01), Paz De Araujo et al.
patent: 5508881 (1996-04-01), Stevens
patent: 5601655 (1997-02-01), Bok et al.
Barr Michael
Beck Shrive
Micro)n Technology, Inc.
Ormiston Steven R.
LandOfFree
Method for removing contaminants from a semiconductor wafer does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for removing contaminants from a semiconductor wafer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for removing contaminants from a semiconductor wafer will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2212003