Method of fabrication for ultra thin nitride liner in silicon tr

Details Method of fabrication for ultra thin nitride liner in silicon tr Method of fabrication for ultra thin nitride liner in silicon tr

1999-01-06

2000-09-05

Utech, Benjamin L.

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438711, 438712, 438713, 438723, 438724, H01L 213065

Patent

active

061142514

ABSTRACT:
An isolation structure and a method of making the same are provided. In one aspect, the method includes the steps of forming a trench in the substrate and a first insulating layer in the trench that has a bottom, a first sidewall and a second sidewall. Silicon nitride is deposited in the trench. Silicon nitride is removed from the bottom of the first insulating layer to establish a layer of silicon nitride on the first and second sidewalls by performing a first plasma etch of the deposited silicon nitride with an ambient containing He, SF.sub.6, and HBr, and a second plasma etch with an ambient containing He, SF.sub.6, and HBr. An insulating material is deposited in the trench. The method provides for reliable manufacture of nitride liners for trench isolation structures. Scaling is enhanced and the potential for parasitic leakage current due to liner oxide fracture or irregularity is reduced.

REFERENCES:
patent: 4561172 (1985-12-01), Slawinski et al.
patent: 4845048 (1989-07-01), Tamaki et al.
patent: 5130268 (1992-07-01), Liou et al.
patent: 5236863 (1993-08-01), Iranmanesh
patent: 5431772 (1995-07-01), Babie et al.
patent: 5433794 (1995-07-01), Fazan et al.
patent: 5436190 (1995-07-01), Yang et al.
patent: 5536675 (1996-07-01), Bohr
patent: 5679599 (1997-10-01), Mehta
Stanley Wolf and Richard N. Tauber; Silicon Processing for the VLSI Era, vol. 2--Process Integration; pp. 45-58; 1990.

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