Process for production of semiconductor device having an insulat

Details Process for production of semiconductor device having an insulat Process for production of semiconductor device having an insulat

1997-10-07

2000-09-05

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438623, 438672, 438688, 438780, 438927, H01L 214763, H01L 2144, H01L 2131, H01L 21469

Patent

active

061142360

ABSTRACT:
A process for producing a semiconductor device having an interlayer insulating film of low dielectric constant and interconnects of low resistance and operable at a high speed, which comprises:

REFERENCES:
patent: 5429995 (1995-07-01), Nishiyama
patent: 5614439 (1997-03-01), Murooka
patent: 5641581 (1997-06-01), Nishiyama
patent: 5783483 (1998-07-01), Gardner
patent: 5837604 (1998-11-01), Jun
Extended abstract of the 1993 International Coference on Solid State Devices and Materials; Makuhari; 1993; pp. 180-182.

Affiliated with

Also associated with

Rating

Process for production of semiconductor device having an insulat does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for production of semiconductor device having an insulat, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for production of semiconductor device having an insulat will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2211826