Method of making a semiconductor with copper passivating film

Details Method of making a semiconductor with copper passivating film Method of making a semiconductor with copper passivating film

1999-06-23

2000-09-05

Chaudhari, Chandra

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438633, 438638, 438687, 438692, 438626, H01L 214763, H01L 2144, H01L 21302, H01L 21461

Patent

active

061142344

ABSTRACT:
A method of making a semiconductor with a passivating film for copper interconnects includes the step of etching a first set of trench openings within a second oxide layer and then through an etch stop layer that has been deposited over a first oxide layer on a semiconductor substrate. At least a second set of openings are etched in the first oxide layer within the bounds defined by each of a first set of openings. A copper layer is deposited and a passivating film formed on top of the deposited copper layer by depositing one of either a chromate or chromite on the deposited copper layer and forming a respective copper chromate or copper chromite composition. The passivating film is chemically mechanically polished with a slurry containing a respective nitric acid when the passivating film is formed from a chromite and ammonium hydroxide when the passivating film is formed from a chromate.

REFERENCES:
patent: 5780358 (1998-07-01), Zhou et al.
Carpio et al, "Initial study on copper CMP slurry chemistries", Thin Solid Films 266: 238-244, 1995.
Aruna Bahadur, "Study of film growth on copper in chromate solution by a radioactive tracer technique", Journal of Materials Science Letters, vol. 17 No. 8; pp. 701-704, Apr. 1998.

Affiliated with

Also associated with

Rating

Method of making a semiconductor with copper passivating film does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making a semiconductor with copper passivating film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making a semiconductor with copper passivating film will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2211797