Method of making a semiconductor device with a composite gate di

Details Method of making a semiconductor device with a composite gate di Method of making a semiconductor device with a composite gate di

1998-07-21

2000-09-05

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438 3, 438240, 438216, 438591, H01L 213205, H01L 2100

Patent

active

06114228&

ABSTRACT:
The present invention is directed to a new semiconductor device and a method for making same. The new semiconductor device is comprised of a gate barrier layer, a composite gate dielectric layer, a conductor layer, and at least one source/drain region formed in a semiconducting substrate. The method comprises forming the gate barrier layer, composite gate dielectric layer and conductor layer, patterning those layers, and forming at least one source/drain region in said semiconductor substrate. The composite gate dielectric layer is comprised of at least two different materials having different dielectric constants.

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