Situ stringer removal during polysilicon capacitor cell plate de

Details Situ stringer removal during polysilicon capacitor cell plate de Situ stringer removal during polysilicon capacitor cell plate de

1993-12-02

1995-01-03

Quach, T. N.

Fishing, trapping, and vermin destroying

437228, 156643, 156646, 156653, H01L 21302

Patent

active

053786483

ABSTRACT:
Capacitors such as storage cells for Dynamic Random Access Memories are formed in a process for etching a polycrystalline silicon layer to form a storage cell during the manufacture of a semiconductor device. The etch results in a cell having reduced undercutting of the poly cell, and eliminates the formation of poly stringers. The inventive etch comprises the use of NF.sub.3 and/or SF.sub.6 during a magnetically enhanced low pressure reactive ion etch using a carbon-free etch gas of Cl.sub.2.

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