Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1996-11-20
2000-09-05
Nguyen, Nam
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20429812, C23C 1434
Patent
active
061137502
ABSTRACT:
Formation of metal thin films by collimate sputtering with high productivity and high bottom coverages. The bottom coverages by collimate sputtering are increased by using a target having a high sputtered-particle emission probability in the range of angles at which the collimator passage rate is high, without increasing the aspect ratio of the collimator, that is, without lowering the productivity.
REFERENCES:
patent: 4824544 (1989-04-01), Mikalesen et al.
patent: 5529670 (1996-06-01), Ryan et al.
patent: 5607899 (1997-03-01), Yoshida et al.
patent: 5635036 (1997-06-01), Demaray et al.
patent: 5643422 (1997-07-01), Yamada
patent: 5711858 (1998-01-01), Kontra et al.
patent: 5772860 (1998-06-01), Sawada et al.
Ohta Toshiyuki
Shinmura Toshiki
Yamada Hiroaki
NEC Corporation
Nguyen Nam
VerSteeg Steven H.
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