Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-08-04
2000-12-12
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257393, 257754, 257903, H01L 2976, H01L 2994, H01L 31062, H01L 31113
Patent
active
061602949
ABSTRACT:
A semiconductor device of the present invention includes an insulating layer covering a plurality of semiconductor elements formed in a semiconductor layer, an opening portion formed in the insulating layer respective conductive portions of the plurality of semiconductor elements in the insulating layer, and a conductive pattern formed in the opening portion for connecting respective conductive portions of the plurality of semiconductor elements.
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Fujitsu Limited
Ngo Ngan V.
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