Vertical type misfet having improved pressure resistance

Details Vertical type misfet having improved pressure resistance Vertical type misfet having improved pressure resistance

1999-02-19

2000-12-12

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257339, H01L 29772

Patent

active

061602884

ABSTRACT:
A vertical type MISFET having a trench structure is improved in pressure resistance without increasing its on-resistance. In the vertical type MISFET, a p-type base region is so formed as to be deeper than a trench immediately under which is formed an n-type semiconductor region. This region is adjacent to an n-type epitaxial layer and higher in concentration of impurities than an n-type semiconductor substrate.

REFERENCES:
patent: 5714781 (1998-02-01), Yamamoto et al.
patent: 5821583 (1998-10-01), Hshieh et al.

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