Polysilicon electrode with increased surface area and method for

Details Polysilicon electrode with increased surface area and method for Polysilicon electrode with increased surface area and method for

1998-12-21

2000-12-12

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257303, H01L 27108

Patent

active

06160285&

ABSTRACT:
An electrode structure for use on an integrated circuit, and a method for forming the same. The electrode structure is formed by depositing a polysilicon layer on a dielectric layer. The polysilicon layer is then annealed until a plurality of non-contiguous polysilicon clusters are formed. Each of the non-contiguous polysilicon clusters has a base end and a top end. The base ends of the non-contiguous clusters are preferably separated by a spacing (S). Following the annealing step, the non-contiguous polysilicon clusters are connected electrically by depositing a conductive layer having a thickness (T) over the annealed polysilicon layer. The spacing (S) is preferably greater than twice the thickness (T).

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