High-voltage lateral field effect transistor having auxiliary dr

Details High-voltage lateral field effect transistor having auxiliary dr High-voltage lateral field effect transistor having auxiliary dr

1997-02-18

1998-06-09

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257344, 257343, 257491, H01L 2980

Patent

active

057639272

ABSTRACT:
A high-voltage lateral field effect transistor has a lightly doped n-type extended drain region depleted by depletion layers extending from a p-n junction between the lightly doped n-type extended drain region and a p-type silicon substrate and a p-n junction between the lightly doped extended drain region and a p-type impurity region formed in a surface portion thereof, and an n-type step-down region contiguous with the lightly doped n-type extended drain region is formed in a surface of the p-type impurity region so as to permit a step-down drain voltage lower than the drain voltage to be transmitted therefrom, thereby preventing damage to a gate insulating layer of a field effect transistor.

REFERENCES:
patent: 4811075 (1989-03-01), Eklund
patent: 5072268 (1991-12-01), Rumennik
patent: 5258636 (1993-11-01), Rumennik et al.
patent: 5264719 (1993-11-01), Beasom
patent: 5294824 (1994-03-01), Okada
patent: 5313082 (1994-05-01), Eklund
patent: 5559346 (1996-09-01), Kushida

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