Semiconductor integrated circuit having bipolar and MOS transist

Details Semiconductor integrated circuit having bipolar and MOS transist Semiconductor integrated circuit having bipolar and MOS transist

1997-08-07

1998-06-09

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257378, H01L 2976, H01L 2994

Patent

active

057639205

ABSTRACT:
A "BiCMOS" semiconductor integrated circuit, a gate oxide film 110 and a polysilicon film are grown on a semiconductor substrate, and after phosphorus is doped, the polysilicon film is patterned to form gate electrodes 112a and 112b and an emitter electrode 112c. A heat treatment is performed to form an emitter diffused region 113. Phosphorus and boron are selectively implanted with a low impurity concentration, respectively, to form a LDD N.sup.- region 114 and a LDD P.sup.- region 115. Thereafter, a side wall 116 is formed, and boron is implanted into areas B and C so as to form P.sup.+ source/drain regions 117 and a graft base region 18, respectively. Phosphorus is implanted to form N.sup.+ source/drain regions 119.

REFERENCES:
patent: 5124775 (1992-06-01), Iranmanesh
patent: 5376816 (1994-12-01), Nishigoori et al.
patent: 5424572 (1995-06-01), Solheim

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