Fishing – trapping – and vermin destroying
Patent
1996-01-16
1997-03-25
Nguyen, Tuan H.
Fishing, trapping, and vermin destroying
437 32, 437 59, 437917, 148DIG96, H01L 21265
Patent
active
056144245
ABSTRACT:
This invention describes an accumulated base bipolar junction transistor and an application of the accumulated base transistor as an input stage to an operational amplifier. The accumulated base transistor is formed during the processing of Complementary Metal Oxide Semiconductor Transistors. A metal gate is placed over the base region of the accumulated base transistor to form the base accumulator. The base accumulator will improve the gain of the bipolar junction transistor over a high frequency spectrum. The improved gain of the accumulated base transistor will cause an operational amplifier with accumulated-base bipolar transistors as an input stage to have improved performance characteristics over an operational amplifier using CMOS transistors as an input stage of the operational amplifier using the same integrated circuits processing techniques.
REFERENCES:
patent: 4486942 (1984-12-01), Hirao
patent: 5268650 (1993-12-01), Schnabel
patent: 5326710 (1994-07-01), Joyce et al.
patent: 5360750 (1994-11-01), Yang
patent: 5376563 (1994-12-01), Imhauser
patent: 5387553 (1995-02-01), Moksvold et al.
patent: 5492844 (1996-02-01), Imhauser
Liang Mong-Song
Wong Shyh-Chyi
Nguyen Tuan H.
Saile George O.
Taiwan Semiconductor Manufacturing Company , Ltd.
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