Coating apparatus – Gas or vapor deposition – With treating means
Patent
1998-02-19
2000-09-05
King, Roy V.
Coating apparatus
Gas or vapor deposition
With treating means
118723A, 156345, C23C 1600, H05H 100
Patent
active
061126977
ABSTRACT:
Plasma enhanced chemical vapor deposition (PECVD) reactors and methods of effecting the same are described. In a preferred implementation, a PECVD reactor includes a processing chamber having a first electrode therewithin. A second electrode is disposed within the chamber and is configured for supporting at least one semiconductor workpiece for processing. A first RF power source delivers RF power of a first frequency to the first electrode. A second RF power source delivers RF power of a second frequency to the second electrode. Preferably the first and second frequencies are different from one another, and even more preferably, the first frequency is greater than the second frequency. The preferred reactor includes a thermocouple which provides temperature information relative to one of the electrodes. According to a preferred implementation, the power loop developed by the first RF power source is grounded interiorly of the chamber in a manner which reduces if not eliminates interference with other reactor components including the thermocouple.
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Sandhu Gurtej S.
Sharan Sujit
Smith Paul
Applied Materials Inc.
Hassanzadeh P.
King Roy V.
Micro)n Technology, Inc.
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