Multiplexed multi-write port semiconductor memory

Details Multiplexed multi-write port semiconductor memory Multiplexed multi-write port semiconductor memory

1994-05-19

1996-08-06

Nelms, David C.

Static information storage and retrieval

Addressing

Multiple port access

36523001, 36523006, 365154, G11C 800

Patent

active

055441220

ABSTRACT:
Write column selection MOSFETs of memory cells MC are coupled with, for example, the earth potential of the circuit. Write column selection signals supplied to these MOSFETs are formed selectively according to the column selection address signal and the write data. Thereby the write column selection MOSFETs of the memory cells MC function as a substantial write means. That is, the write column selection signal lines are used as the data lines at the same time.

REFERENCES:
patent: 5036491 (1991-07-01), Yamaguchi
patent: 5265045 (1993-11-01), Nishio et al.
patent: 5349564 (1994-09-01), Miyake et al.
patent: 5359562 (1994-10-01), Yasui et al.

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