Semiconductor memory device having presetting function of sense

Details Semiconductor memory device having presetting function of sense Semiconductor memory device having presetting function of sense

1994-10-11

1996-06-25

Zarabian, A.

Static information storage and retrieval

Read/write circuit

Including signal comparison

3652335, G11C 1140

Patent

active

055306713

ABSTRACT:
In a semiconductor memory device including a memory cell array, a digit line for receiving read data from a selected one of read-only memory cells of the memory cell array, a sense amplifier for sensing a voltage at the digit line to generate a sense voltage signal, and a comparator for comparing the sense voltage signal with a reference voltage signal to generate an output signal, a presetting circuit and a constant voltage generating circuit are provided to preset the sense voltage signal by receiving an address transition detection signal.

REFERENCES:
patent: 4972374 (1990-11-01), Wang
patent: 5268874 (1993-12-01), Yamauchi
patent: 5396467 (1995-03-01), Liu
"A 68-ns 4-Mbit CMOS EPROM with High-Noise-Immunity Design", K. Imamiya, et al, IEEE Journal of Solid-State Circuits, vol. 25, No. 1, Feb. 1990, pp. 72-77.

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