Non-volatile semiconductor memory device and method for recoveri

Details Non-volatile semiconductor memory device and method for recoveri Non-volatile semiconductor memory device and method for recoveri

1994-10-28

1996-06-25

Nelms, David C.

Static information storage and retrieval

Floating gate

365218, 36518529, 36518518, G11C 1134

Patent

active

055306691

ABSTRACT:
In an EEPROM, a substrate is grounded, and a voltage supply voltage (5 V) and a high voltage (12 V) are applied to a drain region and a control gate, respectively, while maintaining a source region in a floating condition, so that a voltage stress is applied to a tunnel gate oxide film. As a result, electrons trapped in the tunnel gate oxide film are extracted to a floating gate. Thus, deterioration of the tunnel gate oxide film which is caused by repetition of write/erase, will be recovered.

REFERENCES:
patent: 4884239 (1989-11-01), Ono et al.
patent: 5272669 (1993-12-01), Samachisa et al.
patent: 5357463 (1994-10-01), Kinney
patent: 5357476 (1994-10-01), Kuo et al.

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