Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-03-28
1996-08-06
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257401, 257773, 257786, H01L 2976
Patent
active
055436510
ABSTRACT:
A semiconductor integrated circuit device includes a semiconductor chip having a long side and a short side. The semiconductor chip includes a memory cell area occupying approximately 80 percent of the area of the semiconductor chip and an input and output circuit area provided at an end portion of the semiconductor chip along the short side. Pads and two types of MOS transistors are arranged in an efficient manner to reduce the area of the input and output circuit area. Specifically, a plurality of pads are arranged along the short side in the input and output circuit area and the MOS transistors each constituting a group together with the pad are arranged in an area on the inside of the pads within the chip.
REFERENCES:
patent: 5162893 (1992-11-01), Okano
patent: 5266826 (1993-11-01), Umeyama
Prenty Mark V.
Rohm & Co., Ltd.
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