Semiconductor member and semiconductor device having a substrate

Details Semiconductor member and semiconductor device having a substrate Semiconductor member and semiconductor device having a substrate

1995-12-19

1996-08-06

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257353, 257345, 257354, 257627, 257628, H01L 2108, H01L 2174, H01L 21306

Patent

active

055436480

ABSTRACT:
A semiconductor member with a monocrystalline semiconductor layer for forming a functional element. The main plane of the monocrystalline semiconductor layer has a center line average surface roughness Ra of not more than 0.4 nm when the main plane is washed with an aqueous ammonia-hydrogen peroxide solution in a ratio of NH.sub.4 OH:H.sub.2 O.sub.2 :H.sub.2 O of 1:1:5 by volume at a washing temperature of 85.degree. C. for a washing time of 10 minutes.

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