Insulated gate field effect device with a smoothly curved deplet

Details Insulated gate field effect device with a smoothly curved deplet Insulated gate field effect device with a smoothly curved deplet

1993-01-05

1993-09-28

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257288, H01L 2976, H01L 2994

Patent

active

052488934

ABSTRACT:
An apparatus and method for forming an insulated gate field effect device including a first conductivity-type semiconductor substrate having a concave with a curved surface formed on the main surface, an insulating film formed on the major surface including the concave, a first and second impurity regions of a second conductivity-type formed in the vicinity of the main surface at one side and the other side of the concave, respectively, and a conductive layer formed on the channel region which is formed along the concave between the first and second impurity regions with the insulating film interposed therebetween. The method includes forming a concave with the curve surface on the main surface of a semiconductor substrate; forming an insulating film on the main surface, forming a conductive layer above the concave with an insulating film interposed therebetween; forming a first and second impurity regions of a second conductivity type in the vicinity of the main surface at one side and the other side of the concave.

REFERENCES:
patent: 3675313 (1972-07-01), Driver et al.
patent: 4536782 (1985-08-01), Brown
patent: 4835584 (1989-05-01), Lancaster
patent: 4965219 (1990-10-01), Cerofolini
IEEE Transactions on Electron Devices, vol. ED-30, No. 6, Jun. 1983, pp. 681-686, Fiji Takeda et al.: "New Grooved-Gate MOSFET with Drain Separated from Channel Implanted Region".

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