Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For plural devices
Patent
1994-08-05
1996-06-25
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For plural devices
257 70, H01L 2334
Patent
active
055302890
ABSTRACT:
A semiconductor device includes a rectangular wiring substrate and a plurality of semiconductor elements having connecting electrodes such as projecting electrodes connected to the wiring substrate. Even though the wiring substrate is deformed, the semiconductor elements and connecting electrodes are prevented from being broken, thereby maintaining the reliability of the semiconductor device for a long period of time. A buffer region constituted by grooves is formed in that middle part of the undersurface of the rectangular wiring substrate which is located between both the long sides of the wiring substrate and between both the short sides thereof. The semiconductor elements are formed outside the buffer region. The connecting electrodes of the semiconductor elements are connected to a wiring pattern on the surface of the wiring substrate, with the result that the semiconductor elements are mounted on the wiring substrate. The deformation of the buffer region absorbs a deformation of that part of the wiring substrate which is located near the semiconductor elements mounted on the wiring substrate thereby to protect the semiconductor elements.
REFERENCES:
patent: 5332921 (1994-07-01), Dousen et al.
Doi Kazuhide
Hirano Naohiko
Clark S. V.
Crane Sara W.
Kabushiki Kaisha Toshiba
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