Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

1994-07-05

1996-06-25

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257382, 257327, H01L 29792

Patent

active

055302769

ABSTRACT:
A nonvolatile semiconductor memory device comprises: a semiconductor substrate; a pair of spaced electrode films formed on a surface of the semiconductor substrate and having respective side faces opposing each other with a gap formed between them; a pair of diffusion layers formed in the surface of the semiconductor substrate and having respective end portions aligned with the side faces of the electrode films; an insulating film covering the gap and the spaced electrode films; a gate electrode formed on the insulating film to cover the gap and to extend above the pair of electrode films; and wiring layers directly connected to the pair of electrode films, respectively.

REFERENCES:
patent: 5045901 (1991-09-01), Komori et al.
patent: 5171698 (1992-12-01), Shimoda
New Scaling Guidelines for NMOS Nonvolatile Memory Devices, S. Minami et al., IEEE Transactions on Electron Devices vol. 38, No. 11, Nov. 1991.

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