Process for thermal-etching treatment of compound semiconductor

Details Process for thermal-etching treatment of compound semiconductor Process for thermal-etching treatment of compound semiconductor

1992-02-07

1993-09-28

Kunemund, Robert

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156611, 156643, 437 75, 437167, 437168, 437225, C30B 2500

Patent

active

052483762

ABSTRACT:
A process for the thermal-etching treatment of a GaAs substrate subjected to molecular beam epitaxy, which includes: heating the GaAs substrate above a temperature of 750.degree. C., at which temperature both Ga and As are eliminated from the GaAs substrate, while irradiating the GaAs substrate with an As molecular beam. After the heating and irradiating is complete contamination adhering to the GaAs substrate by eliminating a part of the underlying GaAs. The process can be performed by an apparatus which includes a prechamber and a growth chamber for growing an epitaxial layer.

REFERENCES:
patent: 3969164 (1976-07-01), Cho et al.
patent: 3992233 (1976-11-01), Farrow
patent: 4312681 (1982-01-01), Rupprecht et al.
patent: 4371968 (1983-02-01), Trussell, Jr. et al.
patent: 4493142 (1985-01-01), Hwang
patent: 4589192 (1986-05-01), Dinan et al.
patent: 4622083 (1986-11-01), Shih
patent: 4637129 (1989-01-01), Derkits, Jr. et al.
Tanaka, "Single Longitudinal-Mode Selfaligned (AlGa) As Double-Heterostructure Lasers Fabricated by MBE", Jpn. J. Appl. Phys. Part 2 vol. 24, No. 2, pp. 89-90 Feb. 85.
Chang, "Molecular Beam Epitaxial Growth of Uniform InGaAs on InP in a coaxial In-Ga Oven", J. of Appl. Physics Feb. 1981, pp. 1015-1020.
Ghandhi "ULSI Fabrication Principles," John Wiley & Sons N.Y., 1983, pp. 58-62 and 330-333.
Cho "Epitaxy of Silicon Doped Gallium Arsemide by Molecular beam Method", Metallurgical Transactions, vol. 2, Mar. 1971, pp. 777-780.
Akira Takamori, et al., Cleaning of MBE GaAs Substrates by Hydrogen Radical Beam Irradiation, "Japanese Journal of Applied Physics", Feb. 1987, vol. 26, No. 2, pp. L142-L144.
Journal of the Electrochemical Society, vol. 131, No. 9, Sep. 1984, F. Auret, "Thermal cleaning of InSb surfaces in an ultrahigh vacuum", pp. 2115-2117.
Japanese Journal of Applied Physics. Supplements 16th International Conference Solid State Devices and Materials, Aug. 30-Sep. 1, 1984, N. Matsuo et al.: "Self-cleaning by silicon beam in molecular beam epitaxy", pp. 56-67.
European Search Report, Apr. 6, 1986, Berlin.
Journal of Applied Physics, vol. 45, No. 4, Apr. 1974, pp. 1812-1817, A. Y. Cho and F. K. Reinhart, "Inteface and coping profile characteristics with molecular-beam epitaxy of GaAs: GaAs voltage varactor".

Affiliated with

Also associated with

Rating

Process for thermal-etching treatment of compound semiconductor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for thermal-etching treatment of compound semiconductor , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for thermal-etching treatment of compound semiconductor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2188714