Semiconductor device having a low permittivity dielectric

Details Semiconductor device having a low permittivity dielectric Semiconductor device having a low permittivity dielectric

1994-02-04

1995-08-15

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257758, 257775, 257789, 257795, H01L 2342, H01L 2344

Patent

active

054422370

ABSTRACT:
A semicondutor device having electronic circuitry formed in a semiconductor substrate (11) and separated from an overlying metal interconnect layer (18, 18') using a fluorinated polymer dielectric (14,14'). The fluorinated polymer layer (14,14') may be formed directly on metallic surfaces, or formed on a semiconductor or non-metallic surface using an adhesion promoter (13,13'). Once formed, the fluorinated polymer layer (14,14') can be patterned to provide vias, and covered with a patterned metal interconnect layer (18, 18').

REFERENCES:
patent: 4996584 (1991-02-01), Young et al.
patent: 5055342 (1991-10-01), Markovich et al.
"Optimization of a Fine Line Air Bridge Process", Huang et al U.S. Conf. on GaAs Manufacturing Technology, Apr. 1990.

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