Semiconductor device having a multilayered wiring structure with

Details Semiconductor device having a multilayered wiring structure with Semiconductor device having a multilayered wiring structure with

1995-01-13

1995-08-15

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257759, 257774, 257773, 257779, H01L 2348, H01L 2946, H01L 2954, H01L 2962

Patent

active

054422361

ABSTRACT:
The present invention is characterized in that a dummy wiring is provided between wirings constituting a multi-layered wiring, when an electric connection is prepared between wirings disposed in the vertical direction. The dummy wiring is exposed to the contact hole of the insulating film which is filled by the connection wiring. Therefore, the dummy and multi-layered wiring serve as growth seeds in the contact hole, and tungsten beings selective growth from the growth seeds, as the connection wiring. Secure electric connection is finally provided between the wirings.

REFERENCES:
patent: 3323198 (1967-06-01), Shortes
patent: 4866009 (1989-09-01), Matsuda
patent: 5027188 (1991-06-01), Owada et al.
patent: 5091768 (1992-02-01), Yamazaki
patent: 5117280 (1992-05-01), Adachi

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