Semiconductor device with high dielectric capacitor having sidew

Details Semiconductor device with high dielectric capacitor having sidew Semiconductor device with high dielectric capacitor having sidew

1994-06-07

1995-08-15

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257295, 257306, 257752, 257915, G11C 1124

Patent

active

054422132

ABSTRACT:
According to a semiconductor device and a method of manufacturing thereof, a sidewall spacer is formed at a sidewall of a contact hole, in a recess portion defined by the sidewall of the contact hole and a buried conductive layer, having a film thickness gradually increasing from a top face corner of an interlayer insulation film to the surface of the buried conductive layer. Therefore, a semiconductor device that can achieve favorable breakdown voltage and anti-leak characteristics between a lower electrode layer and an upper electrode layer forming a capacitor of a DRAM.

REFERENCES:
patent: 5046043 (1991-09-01), Miller et al.
patent: 5248628 (1993-09-01), Okabe et al.
patent: 5332684 (1994-07-01), Yamamichi et al.
patent: 5335138 (1994-08-01), Sandhu et al.

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