System and method for semiconductor processing using polarized r

Details System and method for semiconductor processing using polarized r System and method for semiconductor processing using polarized r

1993-12-10

1995-08-15

Berman, Jack I.

Radiant energy

Inspection of solids or liquids by charged particles

Analyte supports

355 71, G03B 2772

Patent

active

054421845

ABSTRACT:
An optical lithography system (10) for exposing a layer (12) of radiation sensitive material on a semiconductor wafer (16) is provided. System (10) comprises a source of polarized radiant energy (18), a mask (20) and a lens (22). Radiant energy from a light source (28) is polarized in a predetermined orientation by polarization filter (30). Polarized radiant energy passes through mask (20) and exposes layer (12) in a predetermined pattern. Actuating member (32) may rotate polarization filter (30) to provide more than one orientation for the polarized radiant energy during a single exposure.

REFERENCES:
patent: 4514082 (1985-04-01), Guegnon et al.
patent: 4819033 (1989-04-01), Yoshitake et al.
patent: 4970546 (1990-11-01), Suzuki et al.
patent: 5300972 (1994-04-01), Kamon
Article, Alfred K. Wong, "Polarization Effects in Mask Transmissions", (1992) SPIE vo. 1674 Optical/Laser Microlithography V pp. 193-200.
Article, Shigeru Aoyama and Tsukasa Yamashita, "Grating Beam Splitting Polarizer Using Multi-Layer Resist Method", (1991) SPIE vol. 1545 International Conference on the Application and Theory of Periodic Structures pp. 241-250.

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