Selective epitaxy of silicon in silicon dioxide apertures with s

Details Selective epitaxy of silicon in silicon dioxide apertures with s Selective epitaxy of silicon in silicon dioxide apertures with s

1993-01-15

1994-04-19

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257622, H01L 2701, H01L 2713, H01L 2918

Patent

active

053048342

ABSTRACT:
In the prior art, selective epitaxial growth (SEG) of semiconductors, performed typically in rectangular windows penetrating through a masking layer located on a major surface of semiconductor substrate, suffers from unwanted facet formation at the corners of the windows--whereby the desirable planar area available for transistor fabrication is reduced. Such facet formation is suppressed--i.e., the area occupied by unwanted facets is reduced--by adding a relatively small lobe penetrating through the masking layer at each corner of each window prior to performing the SEG, whereby transistor packing density can be increased.

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Tanno, K. et al., "Selective Silicon Epitaxy Using Reduced Pressure Technique", Japanese Journal of Applied Physics, vol. 21, No. 9, Sep., 1982, pp. L-564-L-566.
Sugawara, K., "Facets Formed by Hydrogen Chloride Vapor Etching on Silicon Surfaces through Windows in SiO.sub.2 and Si.sub.3 N.sub.4 Masks," J. Electrochem. Soc., Solid State Science, Jan., 1971, pp. 110-114, vol. 118, No. 1.

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