Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1993-02-24

1995-08-15

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

134 31, 437228, 437235, 437187, H01L 21306, B44C 122, C23F 100, C03C 1500

Patent

active

054415942

ABSTRACT:
A contact hole reaching a diffusion layer 2 provided on the surface of a silicon substrate 1 is formed by etching an insulating film 3. At this time, a surface layer 2a formed on the surface of the diffusion layer 2 is removed within a film forming unit by utilizing chlorine trifluoride gas. Next, a polycrystalline silicon film 4 is formed within tile same film forming equipment. Thus, the surface of an electrically conductive layer (including a semiconductor layer) covered with the insulating film is selectively exposed by the etching process and, prior to the formation of the film (including oxidized layer), connected to the exposed surface of the electrically conductive layer, the surface layer formed on the surface of the electrically conductive layer, which includes a naturally oxidized film, damage, contaminated substances or the like, can be completely removed.

REFERENCES:
patent: 5022961 (1991-06-01), Izumi et al.
patent: 5089441 (1992-02-01), Moslehi
"Ultrathin silicon nitride films prepared by combining rapid thermal nitridation with low-pressure chemical vapor deposition", K. Ando and A. Ishitani, Appl. Phys. Lett. 59(9), 26 Aug. 1991, pp. 1081-1083.
"Low Damage Magnetron Enhanced Reactive Ion Etching", Masayuki Sato, et al., Extending Abstracts of the 1991 International Conference on Solid State Devices and Materials, Yokohama, 1991, pp.225-227.

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