Silicon layer having increased surface area and method for manuf

Details Silicon layer having increased surface area and method for manuf Silicon layer having increased surface area and method for manuf

1992-06-16

1994-04-19

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257534, 257622, 257 49, H01L 2968, H01L 2702, H01L 2906, H01L 2712

Patent

active

053048288

ABSTRACT:
A silicon layer having an increased surface area by providing a highly granulated surface area, and a method for manufacturing the same are disclosed. The highly granulated surface of the silicon layer of the present invention provides greater surface area relative to the surface area of the present silicon layer where both layers have the same (length and width) dimensions. The present invention provides a silicon layer for a charge storage electrode having an increased surface area by forming the surface of the silicon layer into a highly granulated topography, which is used as a charge storage electrode, to enable the capacitance of the stacked capacitor to be increased relative to a prior art stacked capacitor having the same area of the silicon layer but with less granulated topography, and provides a process of making a highly granulated silicon layer having an increased surface area relative to the existing methods of making a silicon layer and its associated surface area.

REFERENCES:
patent: 5043780 (1991-08-01), Fazan et al.
patent: 5084405 (1992-01-01), Fazan et al.
patent: 5136533 (1992-08-01), Harari
Japanese Journal of Applied Physics, vol. 16, #1, pp. 175-176 by Matsuo et al. Jan. 1977.
Applied Physics Letters, vol. 35 #10, pp. 742-744 by Gittleman et al. Nov. 1979.
Applied Physics Letters, vol. 37 #7, pp. 653-655 by Craighead et al. Oct. 1980.

Affiliated with

Also associated with

Rating

Silicon layer having increased surface area and method for manuf does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Silicon layer having increased surface area and method for manuf, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon layer having increased surface area and method for manuf will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-21783